REFLECTANCE OF ALAS-GAAS AND IN0.28GA0.72AS-GAAS SUPERLATTICES

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009

[2] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[3] BORN M, 1980, PRINCIPLES OPTICS, P66

[4] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[5] IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J]. ELECTRONICS LETTERS, 1980, 16 (12) : 467 - 469

[6] SINGLE-INTERFACE ENHANCED MOBILITY STRUCTURES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. ELECTRONICS LETTERS, 1981, 17 (17) : 606 - 608

[7] DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21

[8] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386

[9] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 495 - 498

[10] Greenaway D.L., 1968, OPTICAL PROPERTIES B

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009

[2] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[3] BORN M, 1980, PRINCIPLES OPTICS, P66

[4] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[5] IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J]. ELECTRONICS LETTERS, 1980, 16 (12) : 467 - 469

[6] SINGLE-INTERFACE ENHANCED MOBILITY STRUCTURES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. ELECTRONICS LETTERS, 1981, 17 (17) : 606 - 608

[7] DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21

[8] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386

[9] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 495 - 498

[10] Greenaway D.L., 1968, OPTICAL PROPERTIES B