IN-SITU LOW-TEMPERATURE CLEANING OF SILICON SURFACES USING HYDROGEN-ATOMS

In this work we discuss in-situ cleaning of Si (100) and Si (111) using a hydrogen atom source, with particular reference to carbon and oxygen removal and the qualify of the substrate surface after treatment. It is shown that hydrogen atoms are effective at surface carbon removal at temperatures around 350 degrees and may contribute to lowering the thermal desorption temperature of thin oxides. Exposure of the substrate. to hydrogen atoms at high temperature (similar to 750 degrees C), though successful at removing oxide, caused significant damage to the silicon surface.