EXPERIMENTAL-STUDY OF SELF-HEATING IN UNDOPED POLYCRYSTALLINE SILICON THIN-FILMS

被引：4

作者：

DIMITRIADIS, CA

机构：

[1] Department of Physics, Solid State Section, University of Thessaloniki

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 02期

关键词：

D O I：

10.1063/1.346770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The rise in temperature due to Joule-induced heating within undoped polycrystalline silicon resistors is estimated quantitatively when a moderately high electric field is applied. From the experimental results, a phenomenological expression of the rise in temperature in terms of the applied electric field, the geometrical dimensions of the resistor bar, and the resistivity of the polycrystalline silicon thin film is obtained.

引用

页码：862 / 864

页数：3

共 14 条

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