POTENTIAL APPLICATIONS OF FOCUSED ION-BEAM TECHNOLOGY FOR THE SEMICONDUCTOR INDUSTRY

In the last several years focused ion beam (FIB) systems have become available. The key features of these systems include small spot size ( less than 1 mu m), high brightness ( greater than 0. 1 A/cm**2 on target), ion species which are suitable for the doping of semiconductor materials, and interfacing with appropriate components to enable micropatterning and imaging of surfaces. The strength and weakness of the FIB approach relative to alternative methods is discussed. The paper will consider potential applications with emphasis on implantation.