CHARACTERIZATION OF EPITAXIAL ZNS FILMS FABRICATED BY SPUTTERING IN CONTROLLED H2S VAPOR

被引：1

作者：

KAWAKAMI, Y

TAGUCHI, T

HIRAKI, A

机构：

来源：

SURFACE SCIENCE | 1986年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90888-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：571 / 576

页数：6

共 9 条

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[2]

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[8] HOW THE ZNS-MN LAYER THICKNESS CONTRIBUTES TO THE PERFORMANCE OF AC THIN-FILM EL-DEVICES GROWN BY ATOMIC LAYER EPITAXY (ALE) [J].

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