DIRECT ENERGY-GAP OF AL1-XINXAS LATTICE MATCHED TO INP

被引：78

作者：

WAKEFIELD, B

HALLIWELL, MAG

KERR, T

ANDREWS, DA

DAVIES, GJ

WOOD, DR

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.94726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：341 / 343

页数：3

共 14 条

[1] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056

[2]

CASEY HC, 1978, HETEROSTRUCTURE LASE, pCH5

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :607-609

[4]

FAKTOR MM, 1980, CURRENT TOPICS MAT S, V6, pCH1

[5]

FOXTON CT, 1978, J CRYST GROWTH, V44, P75

[6]

HALLIWELL MAG, 1981, I PHYS C SER, V60, P271

[7]

LORENTZ MR, 1970, 10TH P INT C PHYS SE, P44

[8] DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J].

MATTHEWS, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :126-133

[9] LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED AL0.48IN0.52AS ON INP [J].

NAKAJIMA, K ;

TANAHASHI, T ;

AKITA, K .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :194-196

[10] CALCULATION OF THE AL-GA-IN-AS PHASE-DIAGRAM AND LPE GROWTH OF ALXGAYIN1-X-YAS ON INP [J].

NAKAJIMA, K ;

AKITA, K .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (02) :232-238

← 1 2 →