CR ON GAAS (110) - THE EFFECT OF ELECTRONEGATIVITY ON THE SCHOTTKY-BARRIER HEIGHT

被引：18

作者：

WILLIAMS, MD

KENDELEWICZ, T

LIST, RS

NEWMAN, N

MCCANTS, CE

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1202 / 1205

页数：4

共 20 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[2] GAAS(110)-IN - THE BLACK SHEEP IN A WELL-BEHAVED INTERFACE FAMILY [J].

DANIELS, RR ;

ZHAO, TX ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :831-834

[3] FERMI ENERGY PINNING BEHAVIOR AND CHEMICAL-REACTIVITY OF THE PD/GAAS (110) INTERFACE [J].

KENDELEWICZ, T ;

PETRO, WG ;

PAN, SH ;

WILLIAMS, MD ;

LINDAU, I ;

SPICER, WE .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :113-115

[4] PROBING DEPTH IN PHOTOEMISSION AND AUGER-ELECTRON SPECTROSCOPY [J].

LINDAU, I ;

SPICER, WE .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 3 (05) :409-413

[5] SCHOTTKY-BARRIER FORMATION OF AG ON GAAS(110) [J].

LUDEKE, R ;

CHIANG, TC ;

MILLER, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :581-587

[6]

NEWMAN N, UNPUB

[7] MODEL PREDICTIONS FOR THE ENTHALPY OF FORMATION OF TRANSITION-METAL ALLOYS .2. [J].

NIESSEN, AK ;

DEBOER, FR ;

BOOM, R ;

DECHATEL, PF ;

MATTENS, WCM .

CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 1983, 7 (01) :51-70

[8] PALLADIUM ON GAAS - A REACTIVE INTERFACE [J].

OELHAFEN, P ;

FREEOUF, JL ;

KUAN, TS ;

JACKSON, TN ;

BATSON, PE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :588-592

[9]

PAN SH, 1984, MATERIALS RES SOC S, V25, P335

[10]

Pauling L, 1960, NATURE CHEM BOND, P88

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