SINGLE CRYSTALLINE GERMANIUM ISLAND ON INSULATOR BY ZONE-MELTING RECRYSTALLIZATION

被引：12

作者：

TAKAI, M

TANIGAWA, T

GAMO, K

NAMBA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 10期

关键词：

D O I：

10.1143/JJAP.22.L624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L624 / L626

页数：3

共 12 条

[1]

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[3]

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[9] CRYSTALLIZATION OF VACUUM-EVAPORATED GERMANIUM FILMS BY ELECTRON-BEAM ZONE-MELTING PROCESS [J].

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[10] GRAPHOEPITAXY OF GE FILMS ON SIO2 BY ZONE-MELTING RECRYSTALLIZATION [J].

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