OBSERVATION OF RESONANT TUNNELING IN INSB/ALINSB DOUBLE-BARRIER STRUCTURES

被引：24

作者：

SODERSTROM, JR

YAO, JY

ANDERSSON, TG

机构：

[1] Department of Physics, Chalmers University of Technology

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 07期

关键词：

D O I：

10.1063/1.104522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first observation of resonant tunneling in the InSb/Al(x)In(1-x)Sb material system. Five samples with InSb quantum well thicknesses ranging from 70 to 110 angstrom and Al0.5In0.5Sb barrier thicknesses ranging from 22 to 36 angstrom were grown by molecular beam epitaxy on GaAs(100) substrates at a temperature of 420-degrees-C. The best sample, which had 22-angstrom-thick barriers and a 110-angstrom-thick quantum well, displayed a peak-to-valley current ratio of 1.4(3.9) at room temperature (77 K) with a corresponding peak current density of 3.6 X 10(4) A/cm2. Transmission electron microscopy revealed threading dislocations, misfit dislocations, and microtwins in the barrier region.

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页码：708 / 710

页数：3

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