PULSED LASER-HEATING OF SILICON - THE COUPLING OF OPTICAL-ABSORPTION AND THERMAL CONDUCTION DURING IRRADIATION

被引：25

作者：

KWONG, DL ^{[1
]}

KIM, DM ^{[1
]}

机构：

[1] RICE UNIV,DEPT ELECTR ENGN,HOUSTON,TX 77251

来源：

关键词：

D O I：

10.1063/1.331711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：366 / 373

页数：8

共 23 条

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[4] CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE
BELL, RO
TOULEMONDE, M
SIFFERT, P
[J]. APPLIED PHYSICS, 1979, 19 (03): : 313 - 319
[5] BLATT FJ, 1968, PHYSICS ELECTRONICS
[6] FERRIES SD, 1979, AIP C P, V50
[7] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT
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SLACK, GA
[J]. PHYSICAL REVIEW, 1964, 134 (4A): : 1058 - +
[8] JELLISON GE, 1982, ORNLTM8002
[9] KIM DM, 1982, IEEE J QUANTUM ELECT, V18, P224, DOI 10.1109/JQE.1982.1071497
[10] LASER-HEATING OF SEMICONDUCTORS - EFFECT OF CARRIER DIFFUSION IN NON-LINEAR DYNAMIC HEAT-TRANSPORT PROCESS
KIM, DM
KWONG, DL
SHAH, RR
CROSTHWAIT, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 4995 - 5006