LOSSES IN GALNAS(P)/INP AND GAALSB(AS)/GASB LASERS - THE INFLUENCE OF THE SPLIT-OFF VALENCE BAND

被引：29

作者：

MOZER, A ^{[1
]}

ROMANEK, KM ^{[1
]}

HILDEBRAND, O ^{[1
]}

SCHMID, W ^{[1
]}

PILKUHN, MH ^{[1
]}

机构：

[1] KONTRON ELECTR,MUNICH,FED REP GER

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 06期

关键词：

D O I：

10.1109/JQE.1983.1071951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：913 / 916

页数：4

相关论文

共 43 条

[31] SUGIMURA A, 1982, IEEE J QUANTUM ELECT, V18, P352, DOI 10.1109/JQE.1982.1071543
[32] THEORY OF PHONON-ASSISTED AUGER RECOMBINATION IN SEMICONDUCTORS
TAKESHIMA, M
[J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6625 - 6637
[33] AUGER RECOMBINATION IN INAS, GASB, INP, AND GAAS
TAKESHIMA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4114 - +
[34] TANAKA S, 1980, J PHYS SOC JAPAN SA, V49, P631
[35] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN (GALN) (ASP) DH LASERS AT 1.3 AND 1.5 MU-M WAVELENGTH
THOMPSON, GHB
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (02): : 37 - 43
[36] NONRADIATIVE RECOMBINATION IN INGAASP-INP LIGHT-SOURCES CAUSING LIGHT-EMITTING DIODE OUTPUT SATURATION AND STRONG LASER-THRESHOLD-CURRENT TEMPERATURE SENSITIVITY
UJI, T
IWAMOTO, K
LANG, R
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (04) : 193 - 195
[37] VOIGT T, 1981, I PHYS C SER, V63, P77
[38] HIGH-PERFORMANCE 880 NM (GAAL)AS-GAAS OXIDE STRIPE LASERS WITH VERY LOW DEGRADATION RATES AT TEMPERATURES UP TO 120-DEGREES-C
WOLF, HD
METTLER, K
ZSCHAUER, KH
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L693 - L696
[39] DIRECT OBSERVATION OF ELECTRON LEAKAGE IN INGAASP/INP DOUBLE HETEROSTRUCTURE
YAMAKOSHI, S
SANADA, T
WADA, O
UMEBU, I
SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 144 - 146
[40] IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES
YAMAMOTO, T
SAKAI, K
AKIBA, S
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) : 95 - 98

← 1 2 3 4 5 →