STUDY OF MBE GROWTH OF GEXSI1-X ON (111) VICINAL SURFACES OF SI SUBSTRATES

被引：5

作者：

BRASEN, D

NAKAHARA, S

BEAN, JC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 05期

关键词：

D O I：

10.1063/1.336305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1860 / 1863

页数：4

共 9 条

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[9]

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