LASER ASSISTED CHEMICAL BEAM EPITAXY

被引：11

作者：

NAGATA, K

IIMURA, Y

AOYAGI, Y

NAMBA, S

机构：

[1] Quantum Materials Research Laboratory, Frontier Research Program, RIKEN, Wako-shi, Saitama

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90338-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have directly observed the site-selective photo-enhanced decomposition of triethylgallium (TEG) for the first time by using reflection high energy electron diffraction in chemical beam epitaxy (CBE) of GaAs. The decomposition rate of TEG is enhanced to a greater extent on an As surface in comparison with that on a Ga surface under Ar+ laser irradiation. The laser irradiation also enhances the surface migration of adsorbates. © 1990.

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页码：52 / 56

页数：5

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