HIGH-QUALITY CRYSTALLINE YBA2CU3O7-DELTA FILMS ON THIN SILICON SUBSTRATES

被引:24
作者
HAAKENAASEN, R [1 ]
FORK, DK [1 ]
GOLOVCHENKO, JA [1 ]
机构
[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
关键词
D O I
10.1063/1.111843
中图分类号
O59 [应用物理学];
学科分类号
摘要
YBa2Cu3O7-delta(001) (YBCO) films with near perfect crystallinity have been grown epitaxially on Si(100) using two intermediate buffer layers: Yttrium-stabilized zirconia (YSZ) and CeO2. All layers were grown by an in situ pulsed laser deposition process. The new films have Rutherford backscattering spectroscopy minimum yields as low as 5%, compared to 12% for YBCO films deposited directly on YSZ. The superconducting onset is above 90 K with a transition width DELTAT of 1 K. After film deposition the Si substrate could be etched from the back to give a circular, 2-mm-diam, 4000 angstrom uniformly thick Si membrane with 300 angstrom YSZ, 80 angstrom CeO2, and 1500-3000 angstrom YBCO on top.
引用
收藏
页码:1573 / 1575
页数:3
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