A GAP DECOMPOSITION SOURCE FOR PRODUCING A DIMER PHOSPHORUS MOLECULAR-BEAM FREE OF GALLIUM AND TETRAMER PHOSPHORUS

被引:24
作者
MONDRY, MJ [1 ]
CAINE, EJ [1 ]
KROEMER, H [1 ]
机构
[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 02期
关键词
D O I
10.1116/1.573257
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:316 / 318
页数:3
相关论文
共 6 条
[1]   TIN PHOSPHIDE AS A PHOSPHORUS BEAM SOURCE FOR MOLECULAR-BEAM EPITAXY [J].
CHAI, YG .
APPLIED PHYSICS LETTERS, 1984, 45 (09) :985-987
[2]   A PH3 CRACKING FURNACE FOR MOLECULAR-BEAM EPITAXY [J].
CHOW, R ;
CHAI, YG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (01) :49-54
[3]   ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J].
DAVIES, GJ ;
HECKINGBOTTOM, R ;
OHNO, H ;
WOOD, CEC ;
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :290-292
[4]   INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].
FOXON, CT ;
JOYCE, BA .
SURFACE SCIENCE, 1977, 64 (01) :293-304
[5]   PHASE EQUILIBRIA IN GAAS AND GAP SYSTEMS [J].
THURMOND, CD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (05) :785-&
[6]   OPERATIONAL ASPECTS OF A GALLIUM-PHOSPHIDE SOURCE OF P2 VAPOR IN MOLECULAR-BEAM EPITAXY [J].
WRIGHT, SL ;
KROEMER, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02) :143-148