CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FROM DISILANE

被引：9

作者：

BOGAERT, RJ

RUSSELL, TWF

KLEIN, MT

ROCHELEAU, RE

BARON, BN

机构：

[1] UNIV DELAWARE,DEPT CHEM ENGN,NEWARK,DE 19716

[2] UNIV DELAWARE,INST ENERGY CONVERS,NEWARK,DE 19716

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 10期

关键词：

D O I：

10.1149/1.2096383

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2960 / 2968

页数：9

共 38 条

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