TWIN-FORMATION MECHANISMS FOR HGCDTE EPILAYERS

被引：15

作者：

KAWANO, M

ODA, N

SASAKI, T

ICHIHASHI, T

IIJIMA, S

KANNO, T

SAGA, M

机构：

[1] NEC CORP LTD,FUNDAMENTAL RES LABS,TSUKUBA,IBARAKI 305,JAPAN

[2] NEC CORP LTD,RES & DEV GRP,TSUKUBA,IBARAKI 305,JAPAN

[3] JAPAN DEF AGCY,INST TECH RES & DEV,MEGURO KU,TOKYO 153,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90739-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

HgCdTe epilayers were grown on CdZnTe substrates by molecular beam epitaxy, and the substrate orientation influence on growth defects was investigated. In the HgCdTe(111BAR)B epilayers, many "lamellar" and/or "columnar" twins were observed, while twin-related triangular hillocks were observed in the (110) and (112)A epilayers. On the other hand, (112BAR)B epilayers have smooth surface morphology, and no twins were observed. Resulting possible twin-formation mechanisms are discussed.

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页码：171 / 176

页数：6

相关论文

共 8 条

[1] MBE P-TYPE HG1-XCDXTE GROWN ON THE (110) ORIENTATION [J].

ARIAS, JM ;

SHIN, SH ;

GERTNER, ER .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :362-366

[2] THE ABSOLUTE DETERMINATION OF CDTE CRYSTAL POLARITY [J].

BROWN, PD ;

DUROSE, K ;

RUSSELL, GJ ;

WOODS, J .

JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) :211-215

[3] NEW DEVELOPMENT ON THE CONTROL OF HOMOEPITAXIAL AND HETEROEPITAXIAL GROWTH OF CDTE AND HGCDTE BY MBE [J].

FAURIE, JP ;

SPORKEN, R ;

SIVANANTHAN, S ;

LANGE, MD .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :698-710

[4] ORIGIN OF DEFECTS IN (111) HGTE GROWN BY MOLECULAR-BEAM EPITAXY [J].

FELDMAN, RD ;

NAKAHARA, S ;

OPILA, RL ;

AUSTIN, RF ;

BOONE, T .

JOURNAL OF CRYSTAL GROWTH, 1989, 98 (04) :581-589

[5] MICROSTRUCTURAL DEFECT REDUCTION IN HGCDTE GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].

HARRIS, KA ;

MYERS, TH ;

YANKA, RW ;

MOHNKERN, LM ;

GREEN, RW ;

OTSUKA, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02) :1013-1019

[6] KINETICS OF MOLECULAR-BEAM EPITAXIAL HGCDTE GROWTH [J].

KOESTNER, RJ ;

SCHAAKE, HF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04) :2834-2839

[7] DEFECT FORMATION DURING MBE GROWTH OF HGTE ON CDTE [J].

SCHAAKE, HF ;

KOESTNER, RJ .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :452-459

[8] RELATION BETWEEN CRYSTALLOGRAPHIC ORIENTATION AND THE CONDENSATION COEFFICIENTS OF HG, CD, AND TE DURING MOLECULAR-BEAM-EPITAXIAL GROWTH OF HG1-XCDXTE AND CDTE [J].

SIVANANTHAN, S ;

CHU, X ;

RENO, J ;

FAURIE, JP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1359-1363