REDUCTION OF ELECTRON-BEAM-INDUCED DAMAGE IN MOS DEVICES USING 3-LAYER RESIST WITH HEAVY-METAL INTERLAYER

被引：6

作者：

SHIMAYA, M

NAKAJIMA, O

HASHIMOTO, C

SAKAKIBARA, Y

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 06期

关键词：

D O I：

10.1149/1.2115855

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1391 / 1395

页数：5

共 15 条

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