DISLOCATIONS IN SILICON DUE TO LOCALIZED DIFFUSION

[1] X-RAY SURFACE TOPOGRAPHY OF DIFFUSION-GENERATED DISLOCATIONS IN SILICON (CONTRAST EXTINCTION BORON DIFFUSION E) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 176 - &

[2] SIMULTANEOUS OBSERVATION OF DIFFUSION-INDUCED DISLOCATION SLIP PATTERNS IN SI WITH ELECTRON BEAM SCANNING + OPTICAL MEANS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2782 - &

[3] PRECIPITATION EFFECTS IN DIFFUSED TRANSISTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1536 - +

[4] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 185 - &

[5] LANDES JJ, 1963, APPL PHYS LETT, V3, P114

[6] Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[7] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1776 - &

[8] DISTRIBUTION OF BORON-INDUCED DEFECTS IN SHALLOW DIFFUSED SURFACE LAYERS OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2862 - +

[9] SATO Y, 1964, JPN J APPL PHYS, V3, P511

[10] NEW X-RAY DIFFRACTION MICROSCOPY TECHNIQUE FOR STUDY OF IMPERFECTIONS IN SEMICONDUCTOR CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2712 - &

[1] X-RAY SURFACE TOPOGRAPHY OF DIFFUSION-GENERATED DISLOCATIONS IN SILICON (CONTRAST EXTINCTION BORON DIFFUSION E) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 176 - &

[2] SIMULTANEOUS OBSERVATION OF DIFFUSION-INDUCED DISLOCATION SLIP PATTERNS IN SI WITH ELECTRON BEAM SCANNING + OPTICAL MEANS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2782 - &

[3] PRECIPITATION EFFECTS IN DIFFUSED TRANSISTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1536 - +

[4] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 185 - &

[5] LANDES JJ, 1963, APPL PHYS LETT, V3, P114

[6] Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[7] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1776 - &

[8] DISTRIBUTION OF BORON-INDUCED DEFECTS IN SHALLOW DIFFUSED SURFACE LAYERS OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2862 - +

[9] SATO Y, 1964, JPN J APPL PHYS, V3, P511

[10] NEW X-RAY DIFFRACTION MICROSCOPY TECHNIQUE FOR STUDY OF IMPERFECTIONS IN SEMICONDUCTOR CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2712 - &