TEMPERATURE-DEPENDENCE OF OPTICAL GAIN, QUANTUM EFFICIENCY, AND THRESHOLD CURRENT IN GAAS/GAALAS GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE SINGLE-QUANTUM-WELL LASERS

被引：10

作者：

ZHU, LD ^{[1
]}

ZHENG, BZ ^{[1
]}

FEAK, GAB ^{[1
]}

机构：

[1] UNIV MICHIGAN,CTR HIGH FREQUENCY MICROELECTR,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 09期

关键词：

D O I：

10.1109/3.35226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2007 / 2012

页数：6

共 20 条

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[2] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS/ALGAAS QUANTUM WELL LASERS
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[4] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES
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[5] ULTRALOW-THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT SINGLE QUANTUM-WELL BURIED HETEROSTRUCTURE (AL,GA)AS LASERS WITH HIGH REFLECTIVITY COATINGS
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1773 - 1775
[6] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN
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[7] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1299 - 1306
[8] RELATIONS BETWEEN THE T0 VALUES OF BULK AND QUANTUM-WELL GAAS
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[J]. APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY, 1987, 44 (03): : 151 - 153
[9] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1929 - &
[10] HUI T, 1987, CHIN J SEMICOND, V8, P1

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