FIELD-DEPENDENT TRANSPORT OF ELECTRONS IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION SYSTEMS

被引：31

作者：

INOUE, K ^{[1
]}

SAKAKI, H ^{[1
]}

YOSHINO, J ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.96090

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：614 / 616

页数：3

共 11 条

[1] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE
BABA, T
MIZUTANI, T
OGAWA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L627 - L629
[2] ELECTRON-TRANSPORT IN HETEROJUNCTIONS AND SUPER-LATTICES
HESS, K
[J]. PHYSICA B & C, 1983, 117 (MAR): : 723 - 728
[3] A NEW ALGAAS/GAAS HETEROJUNCTION FET WITH INSULATED GATE STRUCTURE (MISSFET)
HOTTA, T
SAKAKI, H
OHNO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02): : L122 - L124
[4] MBE GROWTH AND PROPERTIES OF ALGAAS GAAS ALGAAS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION STRUCTURES WITH VERY HIGH CONDUCTIVITY
INOUE, K
SAKAKI, H
YOSHINO, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (10): : L767 - L769
[5] EFFECTS OF SUBSTRATE TEMPERATURES ON THE DOPING PROFILES OF SI IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES
INOUE, K
SAKAKI, H
YOSHINO, J
YOSHIOKA, Y
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 973 - 975
[6] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET)
INOUE, K
SAKAKI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L61 - L63
[7] PARALLEL ELECTRON-TRANSPORT AND FIELD EFFECTS OF ELECTRON DISTRIBUTIONS IN SELECTIVELY-DOPED GAAS/N-ALGAAS
INOUE, M
INAYAMA, M
HIYAMIZU, S
INUISHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04): : L213 - L215
[8] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
MIMURA, T
HIYAMIZU, S
FUJII, T
NANBU, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227
[9] Sheng N. H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P352
[10] A GAAS GATE HETEROJUNCTION FET
SOLOMON, PM
KNOEDLER, CM
WRIGHT, SL
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) : 379 - 381

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