DEEP-LEVEL TRANSIENT SPECTROSCOPY OF PLASTICALLY-BENT EPITAXIAL GAAS

被引：9

作者：

KADOTA, Y

CHINO, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 10期

关键词：

D O I：

10.1143/JJAP.22.1563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1563 / 1566

页数：4

共 18 条

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