A 10-MU W STANDBY POWER 256K CMOS SRAM

被引：4

作者：

KOBAYASHI, Y

EGUCHI, H

KUDOH, O

HARA, T

OOKA, H

SASAKI, I

ANDOH, M

TAMEDA, M

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 05期

关键词：

D O I：

10.1109/JSSC.1985.1052418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：935 / 940

页数：6

共 8 条

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