GROWTH AND CHARACTERIZATION OF SILICON MOLECULAR-BEAM EPILAYERS ON GAP (111) SUBSTRATES

被引：1

作者：

JIANG, WD

ZHOU, GL

CHEN, K

SHENG, C

ZHANG, XJ

WANG, X

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 23期

关键词：

D O I：

10.1063/1.98297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1910 / 1912

页数：3

共 8 条

[1]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[2] SILICON MOLECULAR-BEAM EPITAXY ON GALLIUM-PHOSPHIDE [J].

DEJONG, T ;

DOUMA, WAS ;

VANDERVEEN, JF ;

SARIS, FW ;

HAISMA, J .

APPLIED PHYSICS LETTERS, 1983, 42 (12) :1037-1039

[3] HETEROEPITAXIAL GROWTH OF GAP ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

GONDA, SI ;

MATSUSHIMA, Y ;

MUKAI, S ;

MAKITA, Y ;

IGARASHI, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) :1043-1048

[4]

Hou X.-D., COMMUNICATION

[5] SURFACE STATES ON PHOSPHORUS-RICH AND GALLIUM-RICH GAP(111)P SURFACES IN ELECTRON ENERGY-LOSS SPECTROSCOPY AND PHOTOEMISSION [J].

JACOBI, K .

SURFACE SCIENCE, 1975, 51 (01) :29-37

[6] SILICON STRAINED LAYERS GROWN ON GAP(001) BY MOLECULAR-BEAM EPITAXY [J].

MAREE, PMJ ;

OLTHOF, RIJ ;

FRENKEN, JWM ;

VANDERVEEN, JF ;

BULLELIEUWMA, CWT ;

VIEGERS, MPA ;

ZALM, PC .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) :3097-3103

[7] DEPENDENCE OF THE CHARACTERISTICS OF ZNSE MBE GROWN ON GAAS AND GAP ON THERMAL-TREATMENT IN A VACUUM [J].

NIINA, T ;

YONEDA, K ;

TODA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (10) :2099-2104

[8] POLAR-ON-NONPOLAR EPITAXY - SUB-LATTICE ORDERING IN THE NUCLEATION AND GROWTH OF GAP ON SI (211) SURFACES [J].

WRIGHT, SL ;

INADA, M ;

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :534-539

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