PULSED ANNEALING OF SILICON PLATINUM SYSTEMS

被引：2

作者：

DANNA, E ^{[1
]}

LEGGIERI, G ^{[1
]}

LUCHES, A ^{[1
]}

NASSISI, V ^{[1
]}

NAVA, F ^{[1
]}

NOBILI, C ^{[1
]}

机构：

[1] UNIV MODENA,IST FIS,I-41100 MODENA,ITALY

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1983561

中图分类号：

学科分类号：

摘要：

引用

页码：421 / 425

页数：5

共 7 条

[1]

BERTOLOTTI M, 1982, PHYSICAL PROCESSES L

[2] LOW-ENERGY ELECTRON-BEAM APPLICATIONS FOR REACTIONS IN METAL SILICON SYSTEMS [J].

DANNA, E ;

LEGGIERI, G ;

LUCHES, A ;

MAJNI, G ;

NAVA, F ;

PERRONE, A .

RADIATION PHYSICS AND CHEMISTRY, 1983, 22 (3-5) :803-809

[3] PULSED ELECTRON-BEAM FOR SILICON ANNEALING [J].

LEGGIERI, G ;

LUCHES, A ;

NASSISI, V ;

PERRONE, A ;

PERRONE, MR ;

MAJNI, G ;

NAVA, F .

VACUUM, 1982, 32 (01) :9-10

[4] COMPOUNDS IN THE PD-SI AND PT-SI SYSTEM OBTAINED BY ELECTRON-BOMBARDMENT AND POST-THERMAL ANNEALING [J].

MAJNI, G ;

NAVA, F ;

OTTAVIANI, G ;

DANNA, E ;

LEGGIERI, G ;

LUCHES, A ;

CELOTTI, G .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4055-4061

[5] ELECTRON-BEAM INDUCED REACTIONS IN METAL SI SYSTEMS [J].

MAJNI, G ;

NAVA, F ;

OTTAVIANI, G ;

LUCHES, A ;

NASSISI, V ;

CELOTTI, G .

VACUUM, 1982, 32 (01) :11-18

[6]

MERLI PG, 1981, OPTIK, V58, P201

[7]

WHITE CW, 1981, LASER ELECTRON BEAM

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