INSITU DETERMINATION OF DIELECTRIC FUNCTIONS AND OPTICAL GAP OF ULTRATHIN AMORPHOUS-SILICON BY REAL-TIME SPECTROSCOPIC ELLIPSOMETRY

被引：45

作者：

AN, I

LI, YM

WRONSKI, CR

NGUYEN, HV

COLLINS, RW

机构：

[1] PENN STATE UNIV,DEPT PHYS,UNIV PK,PA 16802

[2] PENN STATE UNIV,DEPT ELECT ENGN,UNIV PK,PA 16802

[3] PENN STATE UNIV,CTR ELECTR MAT & PROC,UNIV PK,PA 16802

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 20期

关键词：

D O I：

10.1063/1.105947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed techniques to determine the near-infrared to near-ultraviolet dielectric function and optical gap of ultrathin amorphous silicon [a-Si:(H)] using real-time spectroscopic ellipsometry during preparation and processing. The techniques have been applied to approximately 50 angstrom a-Si:H films prepared by plasma-enhanced chemical vapor deposition, and to approximately 250 angstrom pure a-Si chemically modified by atomic H exposure. For the latter, the time evolution of the bonded H content can be estimated along with the evolution of the gap.

引用

页码：2543 / 2545

页数：3