METHOD FOR EXTRACTING DEEP-SUBMICROMETER MOSFET PARAMETERS

被引：15

作者：

FIKRY, W

GHIBAUDO, G

HADDARA, H

CRISTOLOVEANU, S

DUTOIT, M

机构：

[1] CNRS, PHYS COMPOSANTS & SEMICOND LAB, F-38016 GRENOBLE, FRANCE

[2] SWISS FED INST TECHNOL, INST MICRO & OPTOELECTR, CH-1015 LAUSANNE, SWITZERLAND

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 09期

关键词：

MOSFETS; SEMICONDUCTOR DEVICE CHARACTERIZATION;

D O I：

10.1049/el:19950481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As the MOSFET channel length srihnks to 0.1 mu m, the influence of the lateral field on the device characteristics becomes increasingly important even at low drain voltage (10mV). The authors present a new method which takes into account the effect of the lateral field to extract the deep submicrometre MOSFET parameters such as threshold voltage, effective channel length, effective mobility and parasitic series resistance.

引用

页码：762 / 764

页数：3

共 8 条

[1] A NEW APPROACH TO DETERMINE THE DRAIN-AND-SOURCE SERIES RESISTANCE OF LDD MOSFETS [J].