A NEW APPROACH TO DETERMINE THE DRAIN-AND-SOURCE SERIES RESISTANCE OF LDD MOSFETS

被引：30

作者：

CHUNG, SSS ^{[1
]}

LEE, JS ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV, INST ELECTR, HSINCHU 300, TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 09期

关键词：

D O I：

10.1109/16.231580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method for determining the intrinsic drain-and-source series resistance and the effective channel length of LDD MOSFET's is proposed. The method is based on the experimentally measured device I-V characteristics and a new parameter extraction procedure. A consistent set of the effective channel length and the gate-voltage-dependent drain-and-source series resistance was thus determined. The comparison between the measured and experimental drain current characteristics shows excellent agreement using the present model values.

引用

页码：1709 / 1711

页数：3

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