AN EFFICIENT SEMI-EMPIRICAL MODEL OF THE IV CHARACTERISTICS FOR LDD MOSFETS

被引：20

作者：

CHUNG, SSS

LIN, TS

CHEN, YG

机构：

[1] WINBOND ELECTR CORP,HSINCHU,TAIWAN

[2] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1691 / 1702

页数：12

共 18 条

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[9] AN ANALYTICAL ONE-DIMENSIONAL MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES [J].

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[10] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J].

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