A PSEUDO-2-DIMENSIONAL ANALYSIS OF SHORT CHANNEL MOSFETS

被引：16

作者：

ELBANNA, M

ELNOKALI, M

机构：

[1] Univ of Pittsburgh, Pittsburgh, PA,, USA, Univ of Pittsburgh, Pittsburgh, PA, USA

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 02期

关键词：

D O I：

10.1016/0038-1101(88)90141-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：269 / 274

页数：6

共 10 条

[1] DRIFT VELOCITY SATURATION IN MOS TRANSISTORS [J].

BAUM, G ;

BENEKING, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (06) :481-+

[2] SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J].

ELMANSY, YA ;

BOOTHROYD, AR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :254-262

[3] A SIMPLE-MODEL FOR THE MOS-TRANSISTOR IN SATURATION [J].

ELNOKALI, M ;

MIRANDA, H .

SOLID-STATE ELECTRONICS, 1986, 29 (06) :591-596

[4] AN ANALYTICAL MODEL OF CONDUCTANCE AND TRANSCONDUCTANCE FOR ENHANCED-MODE MOSFETS [J].

GHIBAUDO, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (01) :323-335

[5] A PARAMETRIC SHORT-CHANNEL MOS-TRANSISTOR MODEL FOR SUBTHRESHOLD AND STRONG INVERSION CURRENT [J].

GROTJOHN, T ;

HOEFFLINGER, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (02) :234-246

[6]

Ko P. K., 1981, International Electron Devices Meeting, P600

[7]

KO PK, 1982, THESIS U CALIFORNIA

[8] ONE-DIMENSIONAL WRITING MODEL OF N-CHANNEL FLOATING GATE IONIZATION-INJECTION MOS (FIMOS) [J].

TANAKA, S ;

ISHIKAWA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1190-1197

[9] A SELF-CONSISTENT PSEUDO-2-DIMENSIONAL MODEL FOR HOT-ELECTRON CURRENT IN MOSTS [J].

TANAKA, S ;

SAITO, S ;

ATSUMI, S ;

YOSHIKAWA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (06) :743-753

[10] ANALYTICAL MODEL AND CHARACTERIZATION OF SMALL GEOMETRY MOSFETS [J].

YAMAGUCHI, T ;

MORIMOTO, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) :559-566

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