TUNNELING CURRENT-VOLTAGE CHARACTERISTICS OF TI-SILICIDE-P- SI-P+ SI SCHOTTKY DIODES

被引：2

作者：

CABANSKI, W

SCHULZ, M

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 03期

关键词：

D O I：

10.1007/BF00619386

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：203 / 210

页数：8

共 26 条

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