LOW-TEMPERATURE GROWTH OF 3C-SIC BY THE GAS SOURCE MOLECULAR-BEAM EPITAXIAL METHOD

被引：43

作者：

MOTOYAMA, S

KANEDA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.101001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：242 / 243

页数：2

共 8 条

[1] 3-TEMPERATURE METHOD AS AN ORIGIN OF MOLECULAR-BEAM EPITAXY [J].

FRELLER, H ;

GUNTHER, KG .

THIN SOLID FILMS, 1982, 88 (04) :291-307

[2]

GORDON S, 1971, NASA SP273 N7137775

[3] THE GROWTH OF SINGLE-CRYSTAL OF 3C-SIC ON THE SI SUBSTRATE BY THE MBE METHOD USING MULTI ELECTRON-BEAM HEATING [J].

KANEDA, S ;

SAKAMOTO, Y ;

NISHI, C ;

KANAYA, M ;

HANNAI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09) :1307-1311

[4] MBE GROWTH OF 3C.SIC/6H.SIC AND THE ELECTRIC PROPERTIES OF ITS P-N-JUNCTION [J].

KANEDA, S ;

SAKAMOTO, Y ;

MIHARA, T ;

TANAKA, T .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :536-542

[5] EPITAXIAL-GROWTH AND CHARACTERIZATION OF BETA-SIC THIN-FILMS [J].

LIAW, P ;

DAVIS, RF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) :642-648

[6] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].

NISHINO, S ;

POWELL, JA ;

WILL, HA .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :460-462

[7] HIGH-TEMPERATURE ELECTRICAL-PROPERTIES OF 3C-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR-DEPOSITION [J].

SASAKI, K ;

SAKUMA, E ;

MISAWA, S ;

YOSHIDA, S ;

GONDA, S .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :72-73

[8]

Stull DR, 1971, JANAF THERMOCHEMICAL, V37

← 1 →