MEASUREMENT OF THE ELECTRICALLY INDUCED REFRACTIVE-INDEX CHANGE IN SILICON FOR WAVELENGTH LAMBDA=1.3-MU-M USING A SCHOTTKY DIODE

被引：15

作者：

EVANS, AF

HALL, DG

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 03期

关键词：

D O I：

10.1063/1.102834

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the results of measurements of the electrically induced refractive index change caused by the free-carrier effect in a silicon Schottky diode. We find that for the wavelength λ=1.3 μm, the real part of the refractive index changes by as much as ∥Δn∥∼0.01 for current densities less than 1 A/cm2. This refractive index change produced changes in the input-coupling efficiency as large as 75% in our sample geometry.

引用

页码：212 / 214

页数：3

共 14 条

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