ELECTROOPTICAL MEASUREMENT OF LOW-TEMPERATURE GAAS

被引：4

作者：

KORONA, KP ^{[1
]}

KAMINSKA, M ^{[1
]}

BARANOWSKI, JM ^{[1
]}

WEBER, ER ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,BERKELEY,CA 94720

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 22卷 / 01期

关键词：

D O I：

10.1016/0921-5107(93)90221-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photocurrent, conductivity and Hall effect studies, performed on GaAs grown by molecular beam epitaxy at low substrate temperatures, are reported. Experiments, conducted on as-grown and 300-600 degrees C annealed layers, showed domination of arsenic antisite (EL2-Like) defects in photocurrent spectra and transport properties of low temperature GaAs. Parameters describing hopping conductivity, and the dependence of these parameters on temperature of annealing, are discussed. Persistent negative photoconductivity was observed. EL2 defect concentration in samples annealed at 600 degrees C was estimated to be of the order of 10(18) cm-(3). Hall measurements on photoexcited carriers showed unexpectedly high mobility, of the order of 10(4) cm(2) V-1 s(-1) at temperatures in the range 100-200 K.

引用

页码：41 / 44

页数：4

共 9 条

[1] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].