NON-LINEAR LUMPED CIRCUIT MODEL OF GAAS-MESFET

被引：9

作者：

CHUA, LO ^{[1
]}

SING, YW ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 07期

关键词：

D O I：

10.1109/T-ED.1983.21216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：825 / 833

页数：9

共 14 条

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[3]

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[4] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J].

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SHUR, MS .

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SOLID-STATE ELECTRONICS, 1972, 15 (12) :1353-+

[8] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J].

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ZULEEG, R .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1415-&

[9] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J].

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :279-330

[10] SMALL-SIGNAL NON-LINEAR CURCUIT MODEL OF GAAS-MESFET [J].

SHUR, MS .

SOLID-STATE ELECTRONICS, 1979, 22 (08) :723-728

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