CORE LEVEL BINDING-ENERGY SHIFTS FOR RECONSTRUCTED GAAS(001) SURFACES

被引：24

作者：

VANDERVEEN, JF

SMIT, L

LARSEN, PK

NEAVE, JH

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

[2] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90663-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：822 / 824

页数：3

共 14 条

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[3] EFFECT OF THE MADELUNG POTENTIAL ON SURFACE CORE-LEVEL SHIFTS IN GAAS
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[7] LARSEN PK, 1982, J PHYS C SOLID STATE, V15, pL431, DOI 10.1088/0022-3719/15/13/010
[8] ANGLE-RESOLVED PHOTOEMISSION FROM AS-STABLE GAAS (001) SURFACES PREPARED BY MBE
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[9] LARSEN PK, PHYS REV B
[10] EVIDENCE FOR COVALENT BONDING IN CRYSTALLINE AND AMORPHOUS AS, SB, AND BI FROM VALENCE-BAND PHOTOELECTRON SPECTRA
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