OPTICAL-PROPERTIES OF ATOMICALLY CONTROLLED INGAAS/INP QUANTUM-WELL STRUCTURES

被引：4

作者：

ASAHI, H ^{[1
]}

IJUIN, H ^{[1
]}

KOHARA, T ^{[1
]}

ASAMI, K ^{[1
]}

WATANABE, H ^{[1
]}

GONDA, S ^{[1
]}

机构：

[1] KINKI UNIV,IIZUKA,FUKUOKA 820,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1994年 / 75卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(94)90165-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomically controlled InGaAs/InP quantum well (QW) structures are grown on (001) InP substrates at 350 degrees C by gas source migration-enhanced epitaxy. Raman scattering measurement suggests the formation of tailored heterointerfaces: QWs having only InAs-type interfaces show the absence of Ga-P bonds, while QWs having InGaP-type interfaces indeed show the presence of Ga-P bonds. 4.2 K photoluminescence (PL) spectra for InGaAs/InP QWs show the very narrow line width comparable to the narrowest line width reported so far. PL peak energy variation with well thickness clearly depends on the heterointerface type, suggesting that the potential shifts to higher energies at the InGaP interfaces, while it drops at the InAs interfaces. Theoretical calculations assuming the formation of controlled heterointerfaces reproduce the experimentally observed PL energy variation.

引用

页码：242 / 247

页数：6

共 11 条

[1] RAMAN-SCATTERING IN INGAAIP LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].