GAS SOURCE MEE GROWTH OF INGAAS/INP SUPERLATTICES

被引：15

作者：

ASAHI, H

KOHARA, T

SONI, RK

TAKEYASU, N

ASAMI, K

EMURA, S

GONDA, S

机构：

[1] The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka, 567, 8-1, Mihogaoka

来源：

APPLIED SURFACE SCIENCE | 1992年 / 60-1卷

关键词：

D O I：

10.1016/0169-4332(92)90486-H

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

InGaAs/InP heterostructures having atomically controlled interfaces are grown by gas source migration-enhanced epitaxy (GS MEE) on (001)InP substrates at 350-degrees-C. RHEED intensity oscillations persisted for over 1 b with the same amplitude and phase during the growth of InGaAs and InP for appropriate supply times of Group III and Group V atoms and proper supply interruption times. The RHEED intensity traces during the growth of InGaAs/InP superlattices as well as Raman spectra from InGaAs/InP quantum well structures suggest the formation of tailored InGaAs/InP heterointerfaces.

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页码：625 / 630

页数：6

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