ATOMICALLY CONTROLLED INGAAS/INP SUPERLATTICES GROWN BY GAS-SOURCE MEE (MIGRATION-ENHANCED EPITAXY)

Atomically controlled InGaAs/InP SL structures having different types of heterointerfaces are grown on (001)InP substrates at 350-degrees-C by gas source MEE (migration enhanced epitaxy). RHEED intensity traces exhibit the same shape at the positions of the same type of heterointerfaces, indicating the formation of the desired heterointerfaces. The Raman spectrum from the SL, having only the InAs-type heterointerfaces, is characterized by the absence of GaP-like LO phonon clearly suggesting the formation of only the InAs-type heterointerfaces, while the SL having InGaP-type interfaces indeed shows the presence of GaP-like LO phonon peak. 4.2 K photoluminescence (PL) spectra for the InGaAs/InP quantum well (QW) structures show a very narrow line width comparable to the narrowest line width reported so far. Furthermore, the PL peak energy variation with well thickness clearly depends on the heterointerface type.