THE EFFECT OF A THIN ULTRAVIOLET GROWN OXIDE ON METAL GAAS CONTACTS

被引:13
作者
SCHMIDT, MT
PODLESNIK, DV
EVANS, HL
YU, CF
YANG, ES
OSGOOD, RM
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期
关键词
D O I
10.1116/1.575723
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1446 / 1450
页数:5
相关论文
共 26 条
[1]   CHEMISORPTION OF OXYGEN AT CLEAVED GAAS(110) SURFACES - PHOTON STIMULATION AND CHEMISORPTION STATES [J].
BARTELS, F ;
MONCH, W .
SURFACE SCIENCE, 1984, 143 (2-3) :315-341
[2]  
BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792
[3]   APPLICATION OF SELECTIVE CHEMICAL-REACTION CONCEPT FOR CONTROLLING THE PROPERTIES OF OXIDES ON GAAS [J].
CHANG, RPH ;
COLEMAN, JJ ;
POLAK, AJ ;
FELDMAN, LC ;
CHANG, CC .
APPLIED PHYSICS LETTERS, 1979, 34 (03) :237-238
[4]   EFFECTS OF ULTRATHIN OXIDES IN CONDUCTING MIS STRUCTURES ON GAAS [J].
CHILDS, RB ;
RUTHS, JM ;
SULLIVAN, TE ;
FONASH, SJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1397-1401
[5]  
GRANT RW, 1980, PHYSICS MOS INSULATO, P202
[6]  
Henisch H K., 1984, SEMICONDUCTOR CONTAC
[7]   REACTIVITY AND INTERFACE CHEMISTRY DURING SCHOTTKY-BARRIER FORMATION - METALS ON THIN NATIVE OXIDES OF GAAS INVESTIGATED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
KOWALCZYK, SP ;
WALDROP, JR ;
GRANT, RW .
APPLIED PHYSICS LETTERS, 1981, 38 (03) :167-169
[8]   INTERFACIAL CHEMICAL-REACTIVITY OF METAL CONTACTS WITH THIN NATIVE OXIDES OF GAAS [J].
KOWALCZYK, SP ;
WALDROP, JR ;
GRANT, RW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :611-616
[9]   FUNDAMENTAL TRANSITION IN ELECTRONIC NATURE OF SOLIDS [J].
KURTIN, S ;
MCGILL, TC ;
MEAD, CA .
PHYSICAL REVIEW LETTERS, 1969, 22 (26) :1433-+
[10]   LOCAL ATOMIC ORDER IN NATIVE III-V OXIDES [J].
LUCOVSKY, G ;
BAUER, RS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :946-951