ELECTRON-MICROSCOPIC STUDIES OF INTERNAL GETTERING OF NICKEL IN SILICON

被引：9

作者：

SINHA, PK

GLAUNSINGER, WS

机构：

[1] ARIZONA STATE UNIV,DEPT CHEM,TEMPE,AZ 85287

[2] ARIZONA STATE UNIV,DEPT CHEM BIO & MAT ENGN,TEMPE,AZ 85287

来源：

JOURNAL OF MATERIALS RESEARCH | 1990年 / 5卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/JMR.1990.1013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The internal gettering of nickel in (100) silicon wafers implanted with 2.5 × 1015 argon-ions/cm2 at 280 keV has been studied by electron microscopy. Nickel deposited on the back surface is gettered by forming a discontinuous layer of nickel silicide, NiSi2, in the argon-implanted region near the front surface. Electron microdiffraction and high-resolution electron microscopy indicate that the layers of nickel silicide probably grow epitaxially on the undamaged silicon surrounding the silicide. © 1990, Materials Research Society. All rights reserved.

引用

页码：1013 / 1016

页数：4

共 20 条

[1] INVESTIGATION OF THE OXYGEN-RELATED LATTICE-DEFECTS IN CZOCHRALSKI SILICON BY MEANS OF ELECTRON-MICROSCOPY TECHNIQUES [J].