NUMERICAL-SIMULATION OF GAAS-MESFETS INCLUDING VELOCITY OVERSHOOT

被引：16

作者：

STENZEL, R

ELSCHNER, H

SPALLEK, R

机构：

[1] Dresden Univ of Technology, Dresden, East Ger, Dresden Univ of Technology, Dresden, East Ger

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 08期

关键词：

D O I：

10.1016/0038-1101(87)90015-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TRANSISTORS, FIELD EFFECT

引用

页码：873 / 877

页数：5

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