AN ANALOG DIGITAL BCDMOS TECHNOLOGY WITH DIELECTRIC ISOLATION - DEVICES AND PROCESSES

被引：11

作者：

LU, CY ^{[1
]}

TSAI, NS ^{[1
]}

DUNN, CN ^{[1
]}

RIFFE, PC ^{[1
]}

SHIBIB, MA ^{[1
]}

FURNANAGE, RA ^{[1
]}

GOODWIN, CA ^{[1
]}

机构：

[1] AT&T BELL LABS, READING, PA 19603 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 02期

关键词：

INTEGRATED CIRCUITS - SEMICONDUCTOR DEVICES; BIPOLAR; -; TRANSISTORS; FIELD EFFECT - Junctions;

D O I：

10.1109/16.2443

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A dielectrically isolated bipolar-CMOS-DMOS (BCDMOS) integrated-circuit technology that has been successfully developed for high-voltage applications (150-500 V) is reported. This technology integrates bipolar, CMOS, DMOS, p-n-p-n, JFET, and DGDMOS (dual-gate DMOS) devices on a single chip. The core BCDMOS process is chosen to be an optimized poly-gate n-channel DMOS process; additional levels and their relative sequences were chosen on the basis of their effects on the performance of the various kinds of devices in the chip and the trade-offs among those performances. The characteristics of the major devices in solid-state switches for telecommunication applications are demonstrated.

引用

页码：230 / 239

页数：10

共 27 条

[1] THE EVOLUTION OF POWER DEVICE TECHNOLOGY [J].