HIGH-VOLTAGE DEVICE TERMINATION TECHNIQUES - A COMPARATIVE REVIEW

被引：23

作者：

BALIGA, BJ

机构：

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1982年 / 129卷 / 05期

关键词：

Compendex;

D O I：

10.1049/ip-i-1.1982.0037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DEVICES

引用

页码：173 / 179

页数：7

共 17 条

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ADLER, MS ;

TEMPLE, VAK .

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[2] THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING [J].

ADLER, MS ;

TEMPLE, VAK ;

FERRO, AP ;

RUSTAY, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :107-113

[3]

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[4]

BALIGA BJ, 1981, SILICON INTEGRATED C

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ZOROGLU, DS .

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[6] SURFACE BREAKDOWN IN SILICON PLANAR DIODES EQUIPPED WITH FIELD PLATE [J].

CONTI, F ;

CONTI, M .

SOLID-STATE ELECTRONICS, 1972, 15 (01) :93-+

[7] FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES [J].

CORNU, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) :347-352

[8] DOUBLE POSITIVE BEVELING - BETTER EDGE CONTOUR FOR HIGH-VOLTAGE DEVICES [J].

CORNU, J ;

SCHWEITZER, S ;

KUHN, O .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (03) :181-184

[9] CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J].

DAVIES, RL ;

GENTRY, FE .

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[10]

GROVE AS, 1967, IEEE T EDUC, V24, P157

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