DETERMINATION OF THE CENTROID DEPTHS OF THE DEPTH PROFILES OF ION-IMPLANTED ANALYTES BY ANGLE-RESOLVED ELECTRON MICROBEAM ANALYSIS

被引:12
作者
GRIES, WH
KOSCHIG, W
机构
[1] Research Institute of the Deutsche Bundespost TELEKOM, Darmstadt, D-6100
关键词
D O I
10.1002/sia.740160168
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Angle‐resolved signal ratio electron microbeam analysis (AR/SR/EMA) was applied for the determination of the centroid depth of the ion‐implanted depth profile of 100 keV 1016 cm−2 P in Si. The experiment is part of an investigation on the suitability of AR/SR/EMA for application in the (non‐destructive) calibration of ion‐implanted reference materials. Copyright © 1990 John Wiley & Sons Ltd.
引用
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页码:321 / 324
页数:4
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