ON THE EVALUATION OF STATISTICAL PARAMETERS OF A NORMAL-DISTRIBUTION OF FILAMENTARY RESISTANCES IN A FORMED MIM DEVICE

被引：2

作者：

RAY, AK

HOGARTH, CA

机构：

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1985年 / 4卷 / 12期

关键词：

D O I：

10.1007/BF00721384

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1522 / 1523

页数：2

共 9 条

[1]

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[2] THE EFFECTS OF FILAMENTARY CONDUCTION THROUGH UNIFORM AND FLAWED FILAMENTS IN INSULATORS AND SEMICONDUCTORS [J].

GOULD, RD .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 55 (03) :363-386

[3] RELATIONSHIP OF THE CURRENT-VOLTAGE CHARACTERISTICS TO THE DISTRIBUTION OF FILAMENT RESISTANCES IN ELECTROFORMED MIM STRUCTURES [J].

GOULD, RD .

THIN SOLID FILMS, 1979, 57 (01) :33-38

[4] A CRITICAL-REVIEW OF THE OBSERVED ELECTRICAL-PROPERTIES OF MIM DEVICES SHOWING VCNR [J].

RAY, AK ;

HOGARTH, CA .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1984, 57 (01) :1-77

[5] ANALYTICAL EXAMINATION OF THE FUNCTIONAL FORM OF THE EXPERIMENTAL CONDUCTION CHARACTERISTIC FOR A FORMED MIM DEVICE SHOWING VCNR [J].

RAY, AK ;

HOGARTH, CA ;

PANK, RS .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1985, 58 (05) :729-742

[6] A MATHEMATICAL-ANALYSIS FOR THE PEAK OF THE CONDUCTION CHARACTERISTIC OF FORMED MIM DEVICES [J].

RAY, AK ;

HOGARTH, CA .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1985, 4 (05) :513-516

[7]

RAY AK, 1985, THIN SOLID FILMS, V123

[8] NEW CONDUCTION AND REVERSIBLE MEMORY PHENOMENA IN THIN INSULATING FILMS [J].

SIMMONS, JG ;

VERDERBER, RR .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1967, 301 (1464) :77-+

[9]

TOPPING J, 1972, ERRORS OBSERVATION T, P59

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