VIBRATIONAL SPECTROSCOPY OF ACCEPTOR-HYDROGEN COMPLEXES IN SILICON - EVIDENCE FOR LOW-FREQUENCY EXCITATIONS

被引：104

作者：

STAVOLA, M

PEARTON, SJ

LOPATA, J

DAUTREMONTSMITH, WC

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.37.8313

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：8313 / 8318

页数：6

相关论文

共 29 条

[1] HYDROGEN-ACCEPTOR PAIRS IN SILICON - REPLY
ASSALI, LVC
LEITE, JR
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (04) : 403 - 403
[2] MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON
ASSALI, LVC
LEITE, JR
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (09) : 980 - 982
[3] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED
BOSOMWORTH, DR
HAYES, W
SPRAY, ARL
WATKINS, GD
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) : 133 - +
[4] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR
CAPIZZI, M
MITTIGA, A
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 918 - 920
[5] EFFECT OF FREE CARRIERS ON ZONE-CENTER VIBRATIONAL MODES IN HEAVILY DOPED P-TYPE SI .2. OPTICAL MODES
CERDEIRA, F
FJELDLY, TA
CARDONA, M
[J]. PHYSICAL REVIEW B, 1973, 8 (10): : 4734 - 4745
[6] RAMAN STUDY OF INTERACTION BETWEEN LOCALIZED VIBRATIONS AND ELECTRONIC EXCITATIONS IN BORON-DOPED SILICON
CERDEIRA, F
FJELDLY, TA
CARDONA, M
[J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4344 - 4350
[7] STUDY OF THE LOCALIZED VIBRATIONS OF BORON IN HEAVILY DOPED SI
CHANDRASEKHAR, M
CHANDRASEKHAR, HR
GRIMSDITCH, M
CARDONA, M
[J]. PHYSICAL REVIEW B, 1980, 22 (10): : 4825 - 4833
[8] HYDROGEN-ACCEPTOR PAIRS IN SILICON
DELEO, GG
FOWLER, WB
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (04) : 402 - 402
[9] HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY
DELEO, GG
FOWLER, WB
[J]. PHYSICAL REVIEW B, 1985, 31 (10): : 6861 - 6864
[10] EFFECTS OF CONFIGURATION INTERACTION ON INTENSITIES AND PHASE SHIFTS
FANO, U
[J]. PHYSICAL REVIEW, 1961, 124 (06): : 1866 - &