TRANSPORT PROPERTIES OF AN INHOMOGENEOUS MODEL OF AMORPHOUS SILICON AND GERMANIUM FILMS

被引:9
作者
THOMAS, P [1 ]
BARNA, A [1 ]
BARNA, PB [1 ]
RADNOCZI, G [1 ]
机构
[1] HUNGARIAN ACAD SCI,RES INST TECH PHYS,BUDAPEST,HUNGARY
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 30卷 / 02期
关键词
D O I
10.1002/pssa.2210300225
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:637 / 646
页数:10
相关论文
共 35 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   SURFACE STATES ON CLEAVED (111) SILICON SURFACES [J].
ASPNES, DE ;
HANDLER, P .
SURFACE SCIENCE, 1966, 4 (04) :353-&
[3]  
BANOVEC A, IN PRESS
[4]  
BANOVEC A, 1973, 6 P YUG VAC C POST
[5]  
BARNA A, 1973, 5 P INT C AM LIQ SEM, V1, P109
[6]  
BEYER W, 1973, 5 P INT C AM LIQ SEM, V1, P251
[7]  
BEYER W, 1974, THESIS MARBURG
[8]  
BIENENSTOCK A, 1973, 5TH AM LIQ SEM P INT, V1, P49
[9]  
BRODSKY MH, 1974, 20 AIP C P YORKT HEI
[10]   ANISOTROPIC MICROSTRUCTURE IN EVAPORATED AMORPHOUS GERMANIUM FILMS [J].
CARGILL, GS .
PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1372-&