INCORPORATION KINETICS OF RARE-EARTH ELEMENTS IN SI DURING MOLECULAR-BEAM EPITAXY

被引：16

作者：

MIYASHITA, K

SHIRAKI, Y

HOUGHTON, DC

FUKATSU, S

机构：

[1] NATL RES COUNCIL CANADA,OTTAWA,ON K1A DR6,CANADA

[2] UNIV TOKYO,DEPT PURE & APPL SCI,MEGURO KU,TOKYO 153,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.114678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Incorporation kinetics of rare-earth elements (Er,Pr) in Si during solid source molecular beam epitaxy (MBE) is studied using secondary ion mass spectrometry. Pronounced surface segregation is consistently observed both for Er and Pr in normal MBE growth and their segregation tendencies are even stronger than those of typical dopants. Segregant-assisted growth (SAG) using Sb was successful in significantly reducing the surface segregation of rare-earth atoms, thereby opening the possibility of establishing layered structures in normal MBE.© 1995 American Institute of Physics.

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页码：235 / 237

页数：3

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