IMPURITY-TO-BAND TUNNELING IN SEMICONDUCTORS

被引：8

作者：

CHAUDHURI, S ^{[1
]}

COON, DD ^{[1
]}

KARUNASIRI, RPG ^{[1
]}

机构：

[1] UNIV PITTSBURGH,DEPT PHYS,PITTSBURGH,PA 15260

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5476 / 5478

页数：3

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